| 摘要 |
<p>PURPOSE:To eliminate the capacity between a source and drain effectively and to obtain excellent display characteristics by arranging short-circuit wiring above a gate line and holding a light shielding electrode at a constant potential. CONSTITUTION:The short-circuit wiring 12 is arranged above the gate line 2'. Further, there is no capacity formed between the source layer 5 and drain layer 6. Here, when a thin film transistor (TR) is turned off and the voltage on the side of the drain 6 varies, the source 5 on the side where liquid crystal is applied with a voltage is not affected. Consequently, a stable voltage is applied to the liquid crystal in the storage time wherein the thin film TR is off, thereby improving display characteristics. Further, the wiring 12 is formed overlapping with the gate line 2', so even if wiring 12 is provided newly, the opening rate does not decreases and the display characteristics are excellent. Then the light shield electrode is held at the constant potential to eliminate newly added capacity between the source 5 and drain 6.</p> |
