| 摘要 |
PURPOSE:To prevent generation of migration, etc., of electrode metal by filling cracks generated within a semiconductor layer with a semiconductor material of amorphous or miniaturized grain size polycrystal structure in a compound semiconductor device depositing a compound semiconductor layer on a substrate. CONSTITUTION:A GaAs layer 3 is deposited in the thickness of 3.5mum or more on a Si substrate 1 through a buffer layer 2. After GaAs layer is deposited at 700 deg.C and an interprocess device is then cooled up to a temperature near the room temperature, cracks 4 are generated on the GaAs layer 3 due to the difference of thermal expansion coefficients of Si and GaAs. Next, temperature is then raised again upto about 400 deg.C within the furnace and thereby GaAlAs 5 is deposited in the thickness of about 0.05mum. This low temperature deposited layer 5 has amorphous or miniature grain size polycrystal structure. Thereafter, if temperature is lowered again to the room temperature, further cracks are no longer recognized because the low temperature deposition layer 5 filling the recessed portions of cracks 4 alleviates stress resulting from difference of thermal expansion coefficients of GaAs and Si. A solar battery element or light emitting diode can be formed by forming a metal layer 6 to the surface of such semiconductor substrate. |
