| 发明名称 |
Field effect transistor using planar technology, and method for producing it |
| 摘要 |
Provided between the crystal layer (7) containing the current channel and the substrate (9) is a buried layer (6) in which the majority carriers of the crystal layer (7) are minority carriers. The starting (turn-on) voltage of the field effect transistor is adjusted via the space charge zone of this additional pn junction. <IMAGE>
|
| 申请公布号 |
DE3719743(A1) |
申请公布日期 |
1988.12.29 |
| 申请号 |
DE19873719743 |
申请日期 |
1987.06.12 |
| 申请人 |
SIEMENS AG |
发明人 |
SCHINK,HELMUT,DR. |
| 分类号 |
H01L29/10;(IPC1-7):H01L29/78;H01L21/265;H01L21/31;H01L27/12;H01L29/46;H01L29/48 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
