| 摘要 |
PURPOSE:To prevent the diffused layer in a substrate from contributing to the formation of alloy spikes by a method wherein a polycrystalline Si part is provided, in a contact region establishing electric connection with Al wirings, in the same process wherein a gate electrode part is produced for an MOS integrated circuit. CONSTITUTION:In the same process wherein a gate electrode is formed for an MOS integrated circuit, a plurality of insular polycrystalline Si 9 and an intra- substrate diffused region 2, separated from the Si 9, are produced. A direct contact region 8 is separated just under the respective insular polycrystalline Si 9 but is united in other part. An insular polycrystalline Si 9 is a two-layer structure composed of a gate oxide film 10 and a polycrystalline Si layer 11. The lamination, when subjected to heat treatment at temperatures not higher than th melt point of Al, generates an Si-Al alloy. The generation of the alloy stops, however, when saturation is reached between the Si out of the polycrystalline si layer 11 and Al wirings, and the growth is checked of vertical alloy spikes between a diffused layer 2a and an Al film in direct contact herewith. |
