| 摘要 |
<p>The invention relates to a bipolar, discrete or integrated, transistor produced on a silicon substrate. So as to render this transistor very fast, the invention provides that, whereas the substrate (1), the collector (2, 3) and the base (15, 17) are made of silicon, the emitter (18) is made of a III-V material, such as Ga As, having a larger forbidden bandwidth than silicon. In the emitter-base heterojunction thus formed the larger forbidden bandwidth of the III-V material favours the effectiveness of injection of electrons into the base. Application to discrete transistors and to integrated circuits, for fast electronics and microwaves. <IMAGE></p> |
