| 摘要 |
PURPOSE:To form a thin film by ion implantation with high efficiency by providing plural targets to plural ion sources, and independently using the plural ion sources in the discrete treatment of a sample. CONSTITUTION:A target 17 is provided at a part of a beam cut 19, and housed, if necessary, in a target housing chamber 18, and an ion is implanted by the beam outputted from an ion source 15. An ion is further implanted in the succeeding target 20. An ion is implanted in the target 20 from the ion source 2 for mass separation, and the ion is further implanted in the vapor-deposited thin metal film formed by an electron beam deposition device 21. The ion beam from an ion source 3 is concentrated on a sputtering target 4, and a thin film having an excellent composition is supplied to the target 20 by ion-beam sputtering. A gate valve 5 is used, as required, to separate the targets 17 and 20 under vacuum, the ion is implanted by jointly using the ion source 15 to the target 20 and the ion source 2 or the electron-beam deposition device 21, or a thin film is formed.
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