发明名称 COPPER ALLOY FOR BURN-IN IC SOCKET OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide a copper alloy which has low stress relaxation at high temps. and does not contain expensive Be by incorporating specific amounts of Ni, Sn and Mn into copper. CONSTITUTION:Said copper alloy contains, by weight, 5-30% Ni, 3-10% Sn, 0.01-2% Mn and the balance Cu. As the auxiliary elements, one or more kinds among 0.0001-5% total among 0.01-1% Si and Fe, 0.01-5% Zn, 0.01-2% Co and Al, 0.001-0.2% Mg, Zr and Nb, 0.001-0.1% As, Cr, Ti, Sb, Pb and Ag, 0.001-0.03% P, 0.0001-0.03% B and 0.0001-0.1% lanthanoids may furthermore be incorporated into said Ni, Sn and Mn. In Ni and Sn, the sufficient age hardening characteristics can not be obtd. in the case of less than the lower limit, the electroconductivity is lowered in the case of more than the upper limit and the bendability is also lowered in Sn. In Mn, the strength becomes insufficient since the deposition of the high concd. layer of Ni and Sn occurs in the case of less than the lower limit and the electroconductivity is lowered in the case of more than the upper limit.
申请公布号 JPS63317636(A) 申请公布日期 1988.12.26
申请号 JP19870152859 申请日期 1987.06.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 ASAMIZU IWAO;KUBOZONO KENJI
分类号 C22C9/02;C22C9/06;H01L23/32;H01R13/03 主分类号 C22C9/02
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