| 摘要 |
PURPOSE:To contrive accomplishment of uniformity of diffusion in a depthwise direction and microscopic formation of a semiconductor device by a method wherein impurities are diffused from the impurity containing coated insulating film formed on an epitaxially grown silicon layer. CONSTITUTION:A silicon oxide film 2 is formed by heat-treating a silicon wafer 1 in the atmosphere of steam, and an aperture 20 is formed on the prescribed part thereof. A silicon grown layer 5 is formed in the aperture 20 by conducting a selective epitaxial growing method, and subsequently an impurity containing coated film 3 is formed by coating on the upper surface of the silicon oxide film 2 and the silicon grown layer 5. Then, when a heat treatment is conducted on the silicon wafer 1, impurities are diffused in the silicon grown layer as shown by the arrows P in the diagram, and an impurity diffusion layer 4a is formed. As a result, a uniform diffusion is conducted, and the excellent impurity diffusion layer 4a which is suitable for microscopic formation of an element can be obtained.
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