| 摘要 |
PURPOSE:To reduce smears and to improve the flatness of the base of a photoconductive film in a photoconductive film laminated solid state image sensor by forming a light shielding layer simultaneously with a first electrode, and isolating the first electrode from the shielding layer by an insulating layer made by oxidizing the first electrode material. CONSTITUTION:Light shielding layers 151, 152 are formed of the same conductive layers as leading electrodes, and isolated by selectively oxidizing from the electrodes. A light fed through an amorphous silicon film 12, mainly through a gap between second electrodes 111 and 112 to a silicon substrate 1 can be reduced by the layers 151, 152, the number of PEPs is not particularly necessarily increased to form the layers 151, 152, and the steps of first electrodes 91, 92 are reduced to improve the flatness of the base of an amorphous silicon photoconductive film 12. A mask for oxidizing to form an insulating layer between molybdenum silicide and the shielding electrode of a polycrystalline silicon under the molybdenum silicide for the electrodes 91, 92 and the layer 151, 152 is not limited to silicon nitride.
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