发明名称 SUPERCONDUCTING DEVICE
摘要 PURPOSE:To facilitate controlling the characteristics with a minute current by a method wherein a superconducting electrode made of oxide superconductor and a control electrode which controls the status of a depletion layer in the superconducting electrode are provided. CONSTITUTION:A Schottky barrier is employed as a means to control a superconducting current. An oxide superconductor thin film of a K2NiF4 type structure or a provskite type crystal structure is formed on a substrate 4 made of MgO by a sputtering method and processed to form a superconducting electrode 1. Then normal-conducting metal selected among Al, Cu, Ni-Cr, Sn and In is applied to the surface of the superconducting electrode 1 by a resistance heating evaporation method and the evaporated metal is processed by a dry- etching method to form a control electrode 2. Therefore, along with the increase of a voltage applied to the control electrode 2, the width of a depletion layer formed in the superconducting electrode 1 is consecutively widened and the applied critical superconducting current is consecutively reduced. With this constitution, the superconducting current applied to both the ends of the superconductor can be modulated.
申请公布号 JPS63311778(A) 申请公布日期 1988.12.20
申请号 JP19870147044 申请日期 1987.06.15
申请人 HITACHI LTD 发明人 HATANO MUTSUKO;NISHINO JUICHI;KAWABE USHIO
分类号 H01L39/22 主分类号 H01L39/22
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