MOS programmable memories using a metal fuse link and process for making the same
摘要
A process for making a metal fuse link in a MOS or CMOS process which includes depositing a refractory metal or metal alloy over an already deposited multi-level oxide and patterning the deposited metal or metal alloy so that it has a fusing segment between and integral with expanded segments such that the length and cross sectional area of the fusing segment is sufficiently small so that the fusing current therethrough is less than 20 milliamperes. The fuse and surrounding circuitry is covered with a passivation layer and contacts formed in the passivation layer to the expanded segments.
申请公布号
US4792835(A)
申请公布日期
1988.12.20
申请号
US19860938226
申请日期
1986.12.05
申请人
TEXAS INSTRUMENTS INCORPORATED
发明人
SACARISEN, STEPHEN P.;BLANKENSHIP, GENE E.;SHAH, RAJIV R.;TRAN, TOAN;MYERS, DAVID J.;LIN, JOHNSON J.;THOMPSON, STEVE