发明名称 MANUFACTURE OF MAGNETORESISTANCE EFFECT ELEMENT
摘要 PURPOSE:To prevent the mutual diffusion on the contact interface between an MR thin film and a conductor thin film by a method wherein the MR thin film, a barrier metal thin film and the conductor thin film are continuously formed, the 3 thin films are etched under a configurative condition that an MR element and a signal lead-out electrode are combined and the unnecessary metal and conductor thin films on the MR element are etched. CONSTITUTION:A magnetoresistance effect element (MR) thin film 1, a barrier metal thin film 4 and a conductor thin film 2 are continuously formed on the surface of a substrate, the 3 thin films 1, 4 and 2 are etched in a form that an MR element and a signal lead-out electrode are united and the unnecessary thin films 4 and 2 on the MR element are etched. Thereby, with the film 1 protected at the time of etching of the film 2, the mutual diffusion on the contact interface between the films 1 and 2 is prevented and moreover, if circumstances require, a bias magnetic field is given to the film 1 by constituting the film 4 with a multilayer film including a permanent magnet thin film 5, a magnetic domain in the film 1 is stabilized and Barkhausen noise in an MR output signal can be inhibited.
申请公布号 JPS63308394(A) 申请公布日期 1988.12.15
申请号 JP19870144852 申请日期 1987.06.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 OODOI YUUZOU
分类号 G01R33/09;G01R33/06;G11B5/39;H01L43/12 主分类号 G01R33/09
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