发明名称
摘要 <p>Piezoelectric crystalline film of zinc oxide with a hexagonal crystal structure and a c-axis substantially perpendicular to the film surface, the crystalline film containing, as additive elements, vanadium and manganese together with or without copper. The piezoelectric crystalline films have high resistivity and a smooth surface, and make it possible to produce piezoelectric transducers with good conversion efficiency which can be used in a wide range of low to high frequencies. Such films can be made by a method comprising sputtering source materials, i.e., zinc oxide, vanadium and manganese together with or without copper onto a surface of a substrate to form a crystalline zinc oxide film, the sputtering being effected by using a film material source consisting essentially of a ceramic of zinc oxide containing vanadium, and manganese together with or without copper.</p>
申请公布号 DE2839577(C2) 申请公布日期 1988.12.15
申请号 DE19782839577 申请日期 1978.09.12
申请人 MURATA MFG. CO., LTD., NAGAOKAKYO, KYOTO, JP 发明人 OGAWA, TOSHIO;MASHIO, TASUKU, NAGAOKAKYO, KYOTO, JP;NISHIYAMA, HIROSHI, MUKOU, KYOTO, JP
分类号 H01L41/18;H01L41/316;(IPC1-7):H01L41/18;B05D5/12;C23C14/44;H01L41/22;C23C14/36;C04B35/48 主分类号 H01L41/18
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