INTEGRATED SEMICONDUCTOR CIRCUIT, COMPRISING BIPOLAR AND MOS TRANSISTORS ON THE SAME CHIP, AND METHOD OF MAKING THE SAME,申请号DE19833378446-传众专利搜索

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发明名称	INTEGRATED SEMICONDUCTOR CIRCUIT, COMPRISING BIPOLAR AND MOS TRANSISTORS ON THE SAME CHIP, AND METHOD OF MAKING THE SAME
摘要
申请公布号	DE3378446(D1)	申请公布日期	1988.12.15
申请号	DE19833378446	申请日期	1983.08.02
申请人	SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUNCHEN	发明人	NEPPL, FRANZ, DR.;SCHWABE, ULRICH, DR.
分类号	H01L21/82;H01L27/06;(IPC1-7):H01L27/06;H01L29/54;H01L29/62	主分类号	H01L21/82
代理机构		代理人
主权项
地址

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