发明名称 SPUTTERING TARGET
摘要 PURPOSE:To prevent the breakage of target pieces caused by heat, by forming flanks at respective lateral end sides of neighboring target pieces on the surface side to be exposed to plasma in a mosaic target consisting of plural materials different in composition. CONSTITUTION:Sectorial target pieces 2' (high-m.p. metal such as Mo) and 3' (silicon) are combined so as to be formed into a discoid state, which is placed on a backing plate 6 made of copper and is then fixed on this backing plate 6 by means of an inside-peripheral ferrule 4 and an outside-peripheral ferrule 5. At this time, flanks 7 (chamfers) are formed at respective end sides of the target pieces 2', 3' adjacent to one another on the surface side to be exposed to plasma. By this method, mutual contact among respective lateral end sides is prevented even if the surface temps. of the target pieces 2', 3' are raised by exposure to plasma and expand with heat, and, as a result, the occurrence of breakage in the highly brittle silicon pieces 3' can be prevented and also its attendant formation of dust can be prevented.
申请公布号 JPS63307264(A) 申请公布日期 1988.12.14
申请号 JP19870140598 申请日期 1987.06.04
申请人 TOSHIBA CORP;TOKUDA SEISAKUSHO LTD 发明人 KAWAGUCHI TATSUZO;YAMAZAKI TOSHINARI;KUMAGAI KENJI
分类号 C23C14/34;H01L21/28;H01L21/285 主分类号 C23C14/34
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