| 摘要 |
PURPOSE:To prevent generation of a heterogeneous layer at an interlayer boundary face and to obtain good fine resist patterns by converting only the region irradiated with UV light to a photoresist to a far UV light absorptive layer which does not allow transmission of the far UV light by a thermochemical reaction with, for example, gaseous ammonia. CONSTITUTION:The far UV light absorptive layer 106 is formed by using the photoresist 102 which sensitizes to both the UV light 104 and the far UV light 107 as the photoresist and inducing the thermochemical reaction in a gaseous silicone org. material, gaseous ammonia or gaseous absorptive dye after projecting the UV light 104 to the photoresist 102. Namely, one layer of the photoresist 102 is formed and the far UV light 104 is first projected thereto through, for example, a glass mask 103 having a prescribed shape and the resist is heat- treated in, for example, the gaseous ammonia, by which the region projected with the UV light 104 is converted to the far UV light absorptive layer 106. The generation of the heterogeneous layer based on mixing is thereby obviated and the good fine resist patterns are easily formed. |
