| 摘要 |
PURPOSE:To obtain a heat-treating furnace for semiconductor wherein the pressure in the furnace is stabilized and kept at a plus pressure, by detecting the difference between a set pressure in the furnace and a practical pressure in the furnace, sending to a gas flow rate adjusting equipment a signal corresponding to the deviation, and controlling the flow rate of exhaust gas by operating the gas flow rate adjusting equipment. CONSTITUTION:From a gas supplying means 14, gas is sent to a heat-treating furnace 1 for semiconductor via a gas intake pipe 7, and reaches a flow rate adjusting equipment 11. The gas reaches a pressure gauge 10, and the gas pressure on the furnace is detected from time to time by the pressure gauge 10. A controlling equipment 12 calcurates the deviation between the practical pressure in the furnace and the pre-set pressure value, and produces a signal corresponding to the deviation. Based on the signal, the opening of the flow rate adjusting equipment 11 is set. As the flow rate of exhaust gas is controlled, the inside of a heat-treating furnace for semiconductor can be kept at a plus pressure, and the pressure in the furnace is stabilized. Further, impure gas is prevented form entering the furnace at the time of heat-treating a semiconductor wafer.
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