| 摘要 |
PURPOSE:To improve the efficiency of film formation for a recording layer by forming a CoCr film having a specific high chromium density as an underlying film on a substrate and depositing CoCr by evaporation on the underlying film by using a mask while moving the substrate. CONSTITUTION:The underlying film 2 consisting of the CoCr film having 23-30wt.% Cr concn. is formed by a vacuum thin film forming method or the like on the substrate 1. The substrate 1 is then moved in an arrow A direction and a CoCr alloy is evaporated from an evaporation source 4. The vapor thereof is scattered in an arrow B direction so that the CoCr is deposited on the layer 2 from an open part 6 of the mask 5 and the recording layer 3 is formed. The fine structure of the CoCr alloy forming the layer 3 can be grown in a perpendicular direction by the CoCr film of the layer 2 even if there are many diagonal components in the scattering direction of said alloy. The efficiency of the film formation is improved by increasing the width in the open part 6 of the mask.
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