| 摘要 |
PURPOSE:To prevent copper from oxidizing and to obtain the insulation properties between the wirings of copper electrodes by a method wherein Si is deposited on the Cu, a heat treatment is performed in an oxygen-containing atmosphere to turn the copper into a copper-Si dioxide alloy and Si on an insulating film is turned into an Si dioxide film. CONSTITUTION:A Ti film 13, a TiN film and a Cu film 11 are adhered in order on an SiO2 film 14, the Cu film 11 is first patterned and the TiN film 12 and the Ti film 13 are patterned using the Cu film 11 obtained in such a way as a mask. Si is deposited on the film 14 including a Cu wiring by a sputtering method. When a heat treatment is performed at 500-1000 deg.C in an O2-containing atmosphere, the sputtered Si 15 of a part which is brought into contact with the Cu film 11 is diffused in the Cu film 11 and is turned into a Cu-Si alloy. However, the Si combines O2 to become SiO2 and the Cu-Si alloy becomes a Cu-SiO2 alloy 16 by the existence of the O2 in the atmosphere and the SiO2 intrudes into the crystal grain boundary of the Cu to prevent the Cu from oxidizing. As the alloy 16 is a dispersion reinforced alloy, it has a nature strong to a stress from the outside. The Si 15 on the film 14 is turned into an SiO2 film 17 and inter-wiring insulation properties are improved.
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