| 摘要 |
PURPOSE:To increase a photosensing area without deteriorating response capability by applying electric field through upper and lower high-concentration regions between which a low-concentration light absorbing carrier travelling layer is interposed, so that the carriers travel vertically with respect to the surface of a semiconductor. CONSTITUTION:After an N-InP buffer layer 2 is deposited on a semi-insulating InP substrate 1 by crystal growth, low-energy Si<+> ions are implanted to form a shallow N<+> region 3 near the surface thereof. Subsequently, N<-> type InGaAs light absorbing carrier travelling layers 4 and 6 are deposited by crystal growth and N<+> regions 5 and 7 are formed similarly. An N-InP window layer 8 is then deposited by crystal growth and subsequently high-energy Si<+> ions are implanted to reach the N<+> regions 3, 5 and 7, so that deep N<+> regions 9 and 10 are formed.
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