SPUTTERING DEVICE

摘要

PURPOSE:To utilize sputtering with high-density plasma to realize continuous film formation of a thin film stably for a long period of time at a high speed and high efficiency by disposing a magnet and vacuum waveguide to a vacuum chamber equipped with a plasma forming chamber having a target and a sample chamber having a substrate. CONSTITUTION:The sample chamber 9 having the substrate 2 is maintained at the adequate vacuum degree and gaseous Ar is introduced into the chamber. The prescribed gaseous pressure is maintained in the plasma forming chamber 11 having the target 12 at the inside top end. The plasma is formed by the electron cyclotron resonance in the plasma forming chamber 11 having the diameter and length to form the microwave cavity resonator where the microwaves from the vacuum waveguide 10 coupled perpendicularly with the magnetic flux of the divergent magnetic field formed by the magnet 8 and diverging toward the substrate 2 in parallel with the side wall of the chamber 11 resonate in said magnetic field. A negative voltage is impressed on the target 12 facing nearly orthogonally with the above-mentioned magnetic flux to effectively attract the ions. High-efficiency sputtering is thus realized and a good- quality film is formed with high efficiency on the substrate 2.