| 摘要 |
PURPOSE:To extremely reduce segregation of B dope in an obtained Si single crystal rod and to uniform electric characteristics of wafer in production of Si single crystal by pulling method, by using a Si-B alloy dopant made of specific B. CONSTITUTION:In producing Si single crystal, a Si-B alloy for dopant material is constituted by using B comprising >=95wt.% <11>B, an isotope and <=5wt.% <10>B.
|
