| 摘要 |
PURPOSE:To obtain a semiconductor device free form cross-talk by a method wherein a plurality of photodiodes provided on a CdTe substrate are brought into contact with metal columns formed on the other Si substrate and, after the spaces around the metal columns are filled with resin, the CdTe substrate is removed by etching except the photodiodes. CONSTITUTION:Well regions 5 made of P-type Hg1-xCdxTe are formed in a CdTe substrate 1 and, after a mask is applied, N-type impurity ions are implanted into the region 5 to form N-type layers 7 which are used as photodiodes 8. Then in order to connect between a plurality of such regions 5, Au films 21 are applied between the regions 5. Input diodes 10 provided in an independently prepared Si substrate 9 are connected to the layers 7 with indium metal columns 12. After that, the spaces around the metal columns 12 are filled with epoxy resin. The unnecessary substrate 1 only is removed with mixed solution of HF.HNO3.CH3COOH.H2O while the regions 5 are left. With this constitution, a metal bump structure free from plastic deformation can be obtained and the circuit can be integrated easily.
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