| 摘要 |
PURPOSE:To make it possible to form an inversion pattern on a real pattern as well as to contrive improvement in dimensional accuracy by a method wherein a microscopic pattern is formed using a high resolution EB resist, the third thin film is formed in such a manner that it is left only on the region where no resist of said pattern is left, and the upper and the lower layers are etched using the pattern of the third thin film as a mask. CONSTITUTION:The two-layer structure, in which EB (electron beam) resist 3 is applied the lower layer thin film 2, is formed, and the upper layer EB resist 3 is EB-exposed: and after a pattern has been formed, the third thin film 6' is formed thereon. Then, the third thin film 6' is etched in such a manner that it is left only on the region where no resist of the upper layer EB resist pattern remains. Subsequently, in inversion pattern is formed by etching the upper layer EB resist 3 and the lower layer thin film 2 using the third thin film 6' as a mask. As a result, the inversion pattern of the microscopic upper layer resist pattern can be easily formed, and dimensional accuracy can also be improved. |
