发明名称 RF transistor package with capacitor
摘要 A semiconductor device comprising a conductive layer; an insulting layer mounted on the conductive layer and having an opening; terminals deposited on the insulating layer; an active semiconductor element mounted on the conductive layer or the insulating layer, and; a capacitor mounted on the conductive layer. In this device, a path between the semiconductor element and the capacitor is very short and the conductive layer serves as a heat sink.
申请公布号 US4788584(A) 申请公布日期 1988.11.29
申请号 US19880166731 申请日期 1988.03.02
申请人 FUJITSU LIMITED 发明人 HIRANO, YUTAKA;ITOH, MASANOBU;IZUMI, AKIRA;DOOI, YOSHIKAZU
分类号 H01L23/12;H01L23/14;H01L23/66;(IPC1-7):H01L23/48 主分类号 H01L23/12
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