| 摘要 |
PURPOSE:To form a thin film having a uniform film thickness distribution on a semiconductor or other substrate by disposing a sample for thin film formation annularly around an electron source in an electron gun device for forming the thin film on the substrate. CONSTITUTION:Electron flow 2 generated when a filament 1 as the electron gun is energized by a power supply 5a is accelerated by an accelerating electrode 1 and is curved by a magnetic field generated by an energized coil 30 to heat and evaporate the sample 4 for vapor deposition in a crucible 6 so that the thin film is formed on the substrate for vapor deposition. The sample 4 as the vapor deposition source is annularly disposed around the axis 22 of the filament 1 which is the electron gun or said sample is annularly moved around the same, by which the vapor of the sample 4 for thin film formation is radiated from a wide angle direction to the substrate. The good-quality thin film having the uniform thickness distribution is thus formed on the substrate.
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