| 摘要 |
PURPOSE:To enable the processing of a substrate surface at a low temperature, and obtain a semiconductor crystal layer of high quality, by projecting a light on a substrate surface in a reducing gas atmosphere containing hydrogen gas before the vapor growth of a semiconductor crystal layer, and cleaning the substrate surface. CONSTITUTION:Prior to crystal growth, the surface of a GaAs substrate 6 in a growth vessel 1 is subjected to cleaning treatment. That is, hydrogen gas is introduced from a gas introducing inlet 3, the pressure inside the growth vessel 1 is set by adjusting the exhaust velocity of an exhausting system 4, and a susceptor 5 is heated. After the temperature of a substrate 6 reaches 400 deg.C, the substrate 6 is vertically irradiated with a laser beam 10 from an excimer laser 9. After the surface is subjected to such a cleaning treatment, DMZn, DMSe and hydrogen gas as a carrier gas are introduced from a gas introducing inlet 2, and the substrate 6 is irradiated with the laser beam 10 from the excimer laser 9 to grow crystal. Thereby, the cleaning of surface is enabled at a comparatively low temperature, and a semiconductor crystal layer of high quality can be formed.
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