MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To form a trench with little inside damage stably by a method wherein a temporary trench whose inside width is allowed to be wider than the width of an aperture is provided and deposition on its inner surfaces and inside shaping by anisotropic etching are carried out. CONSTITUTION:After a temporary trench 3a whose inside width is allowed to be wider than the width of an aperture is formed by trench etching, suitable material is deposited on the inner surfaces of the temporary trench 3a and the parts built-up inward from the aperture edges are removed by anisotropic etching to form a trench 3 whose inside width is not wider than the width of the aperture. The anisotropic etching for removing the built-up parts is carried out for inside shaping to make the trench width not wider than the aperture width and the etching time can be very short. Moreover, very little damage is created inside the formed trench.