| 摘要 |
A negative differential resistance element, the characteristics of which can be modulated externally, is provided by a sequential arrangement of an n-type GaAs emitter layer, a non-doped AlGaAs first barrier layer, an n-type GaAs base layer, a second barrier layer of a superlattice composed of coupled non-doped AlAs and GaAs thin layers, and an n-type collector layer. The conductivity of the emitter, base, and collector layers may be changed to p-type.
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