摘要 |
PURPOSE:To detect a defect position by using that the shape of a stripe magnetic domain is disturbed by a defect when the stripe magnetic domain caused along the transfer path beforehand is moved between adjoining transfer paths with a magnetic means of a bias magnetic field and an in-plane magnetic field, etc. CONSTITUTION:In a magnetic bubble memory element having the transfer path group of a bubble connected by a periodical pattern in one direction formed by an ion implantation, a stripe magnetic domain 21 is generated along a transfer path 20 by a magnetic means. Next, the section between transfer paths opposite by sandwiching an ion implantation area 22 is moved, finally, stuck to the transfer path 20, and then, the stripe magnetic domain 21 is trapped to a defect 23, and by using the disturbance of the shape the position of the defect is detected. Namely, since the stripe magnetic domain 21 is trapped to the defect 23 which is between the transfer paths and in which ion is not implanted, the shape of the part is disturbed. Thus, the defect position can be detected.
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