| 摘要 |
PURPOSE:To remarkably enhance a lateral crystal growth speed as compared with a longitudinal crystal growth speed by using a substrate having a crystal face existed between planes (100) and (110) and a surface in a plane (110) as a single crystal semiconductor substrate. CONSTITUTION:The surface in plane (100) of a single crystal silicon substrate 1 is exposed in an opening 3 on an insulating layer 2. When dichlorosilane is, for example, used for crystal growth of silicon on such a substrate under reduced pressure at low temperature, the crystal growth is advanced with the substrate 1 as a seed directly above the opening 3, a lateral crystal growth occurs on the layer 3, and the surface in plane (110) at an angle 45 deg. with respect to the surface (100) is exposed. The crystal face existed between the angles of the planes (100) and (110) and the substrate having the surface in plane (110) are used as a single crystal semiconductor substrate. Since these surfaces are crossed at an angle smaller than the plane (100) heretofore used generally with respect to the surface (110) presented at the time of the crystal growth, the lateral crystal growing speed becomes larger than the longitudinal crystal growth speed.
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