| 摘要 |
PURPOSE:To obtain a semiconductor device in which a resistance value can be adjusted after a resistor is manufactured by forming in advance connecting electrodes to divide a resistance layer formed on a semiconductor substrate, and short-circuiting the resistance layer between the electrodes to alter the sum of the resistance values to control it. CONSTITUTION:Whole resistance of a resistance layer 2 between contact holes 7a, 7b at both ends of the layer 2 is measured, and when the resistance value is larger than a designed resistance value, a set of contact holes 6a, 6b, 6c of connecting electrodes 4a, 4b, 4c and contact holes 7a, 7b to be short-circuited at both ends of the layer 2 are selected. Then, when total resistance value added with partial resistance layers 2a, 2c coincides with an object resistance value, conductive materials are deposited on partial resistance layers 2b, 2d to form an upper wiring layer 8. The layer 8 on the layer 2b is short-circuited by the deposition, and the layer 8 on the layer 2d short-circuits the layer 2d by invading into the holes 6c, 7b. Accordingly, the total resistance of the layer 2 becomes the resistance value added with those of the layers 2a, 2c to become the same as the object resistance value. |
