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发明名称
延时关断电路中可控硅的过电流保护
摘要
一种由可控硅、阻容元件构成的延时关断电路,在该电路的可控硅支路中串入继电器励磁线圈,使在可控硅的过电流允许持续时间内短路延时电容使延时提前快速结束,强迫可控硅关断而获得保护。
申请公布号
CN88102200A
申请公布日期
1988.11.16
申请号
CN88102200
申请日期
1988.04.13
申请人
高鸿飞
发明人
高鸿飞
分类号
H03K17/08
主分类号
H03K17/08
代理机构
代理人
主权项
一种由可控硅和电阻电容构成的延时关断电路,该电路中有一个可控硅(5)开关支路和控制可控硅(5)的延时电路,延时电路中有延时电容(4),其特征是: 1、所述可控硅(5)支路中串入继电器励磁线圈(6)。 2、该继电器的常开触点(1)与电阻(2)串联成为支路(3) 3、该支路(3)并联在延时电容(4)的两端。
地址
广东省深圳市华富路黄木岗16栋312号
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