| 摘要 |
PURPOSE:To obtain easily the formation of a fine pattern, by performing a process applying a mask wherein a pattern layer almost equal to the pattern pitch of a resist pattern layer to be obtained is formed on a resist film having development properties of negative type and positive type. CONSTITUTION:Resist material having both developing properties of negative type and positive type according to exposure amount is used for a resist film 4. A mask pattern layer 5 is constituted so as to have a pattern wherein the pattern width PW is nearly equal to the neighboring two-pattern pitch Pp of a resist pattern layer 6, and the pattern distance Pc is nearly equal to the pattern pitch between one of these patterns and the further neighboring pattern. Thereby, a pattern of the resist pattern layer 6 is formed on both sides of the pattern of a mask pattern layer 5, so that the pattern of the resist pattern layer can be made fine up to about 1/2 of resolution limit even if the pattern of the mask pattern layer 5 is nearly equal to the resolution limit. |
