| 摘要 |
PURPOSE:To realize a miniaturized and highly accurate device by a method wherein a vacuum isolation wall is installed at a charged particle beam generation source and a means to control a charged particle beam is installed at the isolation wall and/or a charged particle is detected so that plural electron sources or the like can be formed integrally on a single substrate. CONSTITUTION:While each EB source is deflected by its X-direction deflecting electrodes X11, X22 in an X-direction and a drawing operation is executed in the X- direction within a range to be covered by a deflection on the basis of the drawing information from memories MU, M1, a wafer WF and head MB are continuously shifted relatively in a Y-direction. By this setup, all picture elements in the Y-direction in a 1/2 region are drawn. An EB emission head where two or more EB generation sources ES1, ES2 are installed as a unit EB generation source constitutes a number of chambers by using parts V1-V3 or the like; a degree of vacuum is lowered in order of a first chamber-a third third chamber; a vacuum chuck VC for suction of the wafer WF can be used. During this process, sensors S11, S12 are attached to the rear surface of the part V1 or the like. If a part to mount a focusing lens FC and a deflecting electrode AD is constituted to be of multiple chamber structure and the degree of vacuum is lowered in regular order, an EP exposure operation can be executed in the air.
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