| 摘要 |
PURPOSE:To prevent the occurrence of a junction leak by a method wherein, prior to the selective growth of an electric conductor, an appropriately thick insulating film whose edge part comes into contact with a diffusion region is formed on a side face of an electrode window so that an eroded part does not protrude from the diffusion region. CONSTITUTION:An electrode window 4 as an opening is formed in a position of a diffusion region 2 of an interlayer insulating film 3 which has been formed on a silicon substrate 1 having the diffusion region 2. Then, silicon dioxide is deposited on the whole surface including a side face of the electrode window 4 by a CVD method, and an insulating film 7 is formed. An anisotropic etching operation is executed until the insulating film 7 on the bottom of the electrode window 4 and on the surface of the interlayer insulating film 3 are removed. By this process, the insulating film 7 is left only on the side face of the electrode window 4 in such a way that its edge part comes into contact with the diffusion region 2; a corrected electrode window 4a is formed in such a way that the side face of the electrode window 4 is corrected toward the inside. Then, tungsten is grown selectively at the corrected electrode window 4a by a selective CVD method, and an electric conductor 4 which has filled the corrected electrode window 4a is formed. By this setup, a distance from the side face of the corrected electrode window 4a to an edge of the diffusion region 2 becomes bigger with reference to an expanded side (a) at an eroded part 6.
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