| 摘要 |
<p>PURPOSE:To obtain a nonvolatile semiconductor memory capable of realizing a high density by a method wherein, when a data is to be written and read out, a high voltage is impressed on a row line to which a control gate electrode of a non-selective cell is connected and a low voltage is impressed on a row line to which a control gate electrode of a selective cell is connected while, when the data is to be read out, a readout voltage is impressed on a bit line and, when the data is to be written, a voltage corresponding to the data is impressed on the bit line so that the number of wiring parts and contacts can be reduced. CONSTITUTION:When this invention is to be executed in a UV-EPROM, each memory cell 11 inside series circuits 10 is constituted by a dualgate type nonvolatile transistor which is composed of a floating gate electrode formed on a source region, a drain region and a channel region between these regions and of a control gate electrode formed on the electrode. Two or more series circuits 10 are arranged in a matrix form; one end of each circuit 10 is connected to one of a plurality of bit lines 121-12N; the other end is connected to one of grounding lines 131-13M. Furthermore, the control gates inside the circuits 10 are connected to four each of row lines 1411-144M; individual row lines 141-144 are wired commonly to the circuits 10 in the row direction.</p> |
