| 摘要 |
PURPOSE:To prevent a noise due to electromagnetic interference and electrostatic coupling of a semiconductor integrated circuit device by a method wherein an electric conductor for electromagnetic shielding use connected to be in a low impedance state is formed, via an insulating layer, between and/or at the outside of an element and a wiring part which have been formed on a substrate. CONSTITUTION:A MOS transistor is formed in such a way that a gate electrode 10 is formed via a gate oxide film 8 on a silicon substrate 2 in a region between a source 4 and a drain 6. Wiring parts 16, 17 formed on an interlayer insulating film 14 are connected to the source 4 and the drain 6 via contact holes of the insulating film 14. Furthermore, an interlayer insulating film 18 is formed on the gate electrode 10 and the wiring parts 16, 17; an aluminum film 20 of an electric conductor for electromagnetic shielding use is connected and formed to be in a low impedance state on the insulating film 18. By this setup, it is possible to prevent electromagnetic interference and electrostatic coupling affecting an external element and an external wiring part from an element and a wiring part, or are affected by these from the outside; it is possible to eliminate a noise even when an integration scale is enhanced.
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