| 摘要 |
PURPOSE:To improve the throughput, to miniaturize a reaction furnace, and to reduce the consumption of a gaseous reactant and generation of flakes by separating the inside of the reaction furnace into the reaction, gas substitution, load/unload, and temp. stabilizing chambers, and carrying out wafer treatment in each chamber in parallel. CONSTITUTION:The inside of the reaction furnace is separated by partition walls 30 into the reaction chamber 40, the gas substitution chamber 50, the load/unload chamber 60, and the temp. stabilizing chamber 70. A rotatable susceptor 100 having the four sample holders 110 arranged at regular intervals is provided adjacent to the lower side of the partition wall 30. A wafer 14 is placed on the sample holder 110 in the chamber 60, then the susceptor 100 is rotated to an angle of 90 deg., and the wafer is preheated in the chamber 70 and then transferred to the chamber 40. The sample holder 110 is rotated and heated by the attachable and detachable rotating mechanism and heating mechanism provided below the susceptor 100. The gaseous reactant is blown from a gas head 90 onto the heated water 14, and a film is formed. After the film is formed, the sample holder 110 is transferred to the chamber 50, and the untreated wafer 14 is brought into the chamber 40. In addition, gaseous N2 is blown off from the nozzle of a supply pipe 34, and the chambers 40, 50, 60, and 70 are completely isolated from each other by the formed gas curtain and the partition walls 30. |
