发明名称 |
MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
<p>A non-destructive double exposure method of examining photoresist features in section by, e.g., scanning electron microscopy, is described. The resist is exposed twice with one exposure defining integrated circuit features (5, 7, 9) and the other exposure defining an edge type feature (11) which overlaps an integrated circuit feature (5). Resist development produces a sectioned integrated circuit feature (17) which can be examined.</p> |
申请公布号 |
JPS63265426(A) |
申请公布日期 |
1988.11.01 |
申请号 |
JP19880016036 |
申请日期 |
1988.01.28 |
申请人 |
AMERICAN TELEPH & TELEGR CO <ATT> |
发明人 |
JIYON DEIBUITSUDO KASUBAATO;DENISU AARU SHIYUROUPU;TANSHIENGU YANGU |
分类号 |
G01N21/88;G01N21/956;G03F1/08;G03F7/20;H01L21/027;H01L21/30;H01L21/66;H01L21/822;H01L27/04 |
主分类号 |
G01N21/88 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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