| 摘要 |
PURPOSE:To obtain an electrode interconnection which has not only small contact resistance but also excellent characteristics and gives a more reliable quality by providing the electrode interconnection where a film consisting of metallic silicide having a high melting point is deposited on a polycrystalline silicon film that is doped by a dopant and further, by performing its thermal oxidation after forming gate and contact electrodes having the above laminated layers. CONSTITUTION:After a part of a gate oxide film 3 is selectively etched and removed, a polycrystalline silicon film 4 where phosphorus is doped on the whole surface of it is deposited on the above oxide film and a film 5 of about 2000 Angstrom is also deposited. The polycrystal silicon film 4 where phosphorus is doped is formed by thermally decomposing SiH4, for example, containing PH4 at a temperature of about 800 deg.C. And as to a MoSi2 film 5, it is formed, for example, by sputtering. After that, a laminated layer film composed of the polysilicon film 4 and the MoSi2 film 5 is selectively etched and the gate oxide film 3 is selectively etched by using a remaining laminated film as a mask and such a treatment allows the substrate surface to be exposed. And then, phosphorus diffusion is carried out in an oxidizing atmosphere of about 1000 deg.C where, for example, a N2 gas passing through PoCl3 is used and a self-aligned n<+> type source 6 and drain 7 formed.
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