| 摘要 |
PURPOSE:To improve yield, and to decrease the number of processes by forming complicate MOS structure and diffusing and shaping a reverse conductivity type region onto the rear of a semiconductor substrate. CONSTITUTION:A plurality of reverse conductivity type first regions 2...2 are diffused and formed into one conductivity type semiconductor substrate 1, and a first gate insulating film 7 is shaped onto the semiconductor substrate 1 and gate electrodes 8...8 are formed among the first regions 2...2. Reverse conductivity type second regions 9...9 are diffused and shaped, using the gate electrodes 8...8 as masks, and intermediate-removing-shaped one conductivity type third regions 11...11 are formed into the second regions 9...9, employing films 10 shaped among the gate electrodes 8...8 and the gate electrodes 8...8 as masks. A second gate insulating film 12 is formed onto the first gate insulating film 7 and the gate electrodes 8...8, a reverse conductivity type fourth region 13 is diffused and shaped onto the rear of the semiconductor substrate 1, and electrodes 13-15 are formed onto both surfaces of the semiconductor substrate 1. Accordingly, the number of processes is decreased, and yield is improved. |
