| 摘要 |
PURPOSE:To improve the step coverage of a cover protective coat and prevent the crack due to furrowing of the cover protective coat by forming the second coat on the first conductive coat and by preparing round arranged layers on interconnections with an anisotropic etching technique. CONSTITUTION:After forming electric circuit elements on a semiconductor substrate 1, the first coat 5 consisting of Al is formed and then the second coat 6 is formed by causing the oxide silicon film to grow by a CVD technique. An arranged layers 6' are formed through a patterning process after etching the second coat 6 with the aid of an isotropic etcher by the use of photoresist masks 8. As to the arranged layers 6', their side etching is accelerated and they become trapezoidal ones of longer lower side and shorter upper side and then steps are smoothed. Further, the photoresist masks 8 are removed and the first coat 5 is treated by an anisotropic etching technique by using the arranged layers 6' as masks and interconnections 5' are formed. As the round arranged layers 6' are formed on the interconnections 5', the surface of a cover protective coat 9 varies smoothly and has the favorable step coverage.
|
