| 摘要 |
PURPOSE:To obtain an amorphous silicon/carbon hydride film with a high film quality by a method wherein a mixture of a gaseous material containing silicon atoms in its molecules and gaseous carbone is supplied onto a substrate to react in a plasma to deposite amorphous silicon/carbon hydride on the surface of the substrate. CONSTITUTION:Diazomethane supplied into a gas passage 14 is subjected to photodecomposition by the application of ultraviolet rays from an ultraviolet source 15 and a created CH2 carbine flows into an inner space 23 through a 2nd inlet 13. The CH2 constitutes an atmosphere of 0.01-10 Torr in the inner space 23 with a monosilane which flows into the inner space 23 through a 1st inlet 12 and is supplied onto a substrate 16 together with the monosilane. As a high frequency voltage is applied to a high frequency electrode 19, a glow discharge is induced between the high frequency electrode 19 and a support mechanism 17. By the effect of the plasma of the glow discharge, the mixture of the diazomethane and the CH2 is reacted to deposite amorphous silicon/ carbon hydride on the surface of the substrate 16 so that an amorphous silicon/ carbon hydride film can be formed. |
