| 摘要 |
PURPOSE:To eliminate the ununiformity of the film thickness of an Si oxide film between a polycrystalline Si electrode and a word line and to improve a dielectric breakdown strength by a method wherein a poly Si layer is subjected to anisotropic etching to leave the polycrystalline Si layer on the side surfaces of the Si oxide film and the whole left polycrystalline Si layer is converted into the Si oxide film. CONSTITUTION:An oxidation-resistant film 13 is formed on the surface of a semicondutor substrate 11 and after a polycrystalline Si electrode 14 is formed thereon, the surface of the electrode 14 is converted into an Si oxide film 15. Then, the above film 13 is etched away using the film 15 as a mask, a polycrystalline Si layer 16 is formed on the whole surface of the substrate and moreover, the polycrystalline Si layer 16 is subjected to anisotropic etching to leave the polycrystalline Si layer 16 only on the side surfaces of the above film 15. Then, the whole left polycrystalline Si layer 16 is converted into the film 15. After that, a polycrystalline Si film, for example, is grown and after a phosphorus is diffused in the polycrystalline Si film to let have a conductivity, an etching is performed to form a word line 18 and a one transistor type dynamic memory cell is formed. |
