发明名称 Light emitting chip and optical communication apparatus using the same
摘要 This invention relates to a semiconductor laser of a buried-hetero structure. In this semiconductor laser, the side surfaces of an active layer are in contact with a plane having a stable state of interface. As a result, the threshold current value of this semiconductor laser is low, and a stable operation can be obtained without causing any kink (projection) in the current-optical output characteristics. An optical communication system using this semiconductor layer has a low operating current, and can maintain high coupling efficiency with an optical fiber without the occurrence of noise, so that optical communication having high reliability is possible.
申请公布号 US4779281(A) 申请公布日期 1988.10.18
申请号 US19870076754 申请日期 1987.07.23
申请人 HITACHI, LTD. 发明人 NAKA, HIROSHI;SEKO, ICHIRO;KOBAYASHI, SHUJI;HANEDA, MAKOTO
分类号 H04B10/00;G02B6/42;H01L33/00;H01S5/00;H01S5/02;H01S5/227;H04B10/02;H04B10/28;(IPC1-7):H01L33/00;H01S3/19 主分类号 H04B10/00
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