发明名称 |
Light emitting chip and optical communication apparatus using the same |
摘要 |
This invention relates to a semiconductor laser of a buried-hetero structure. In this semiconductor laser, the side surfaces of an active layer are in contact with a plane having a stable state of interface. As a result, the threshold current value of this semiconductor laser is low, and a stable operation can be obtained without causing any kink (projection) in the current-optical output characteristics. An optical communication system using this semiconductor layer has a low operating current, and can maintain high coupling efficiency with an optical fiber without the occurrence of noise, so that optical communication having high reliability is possible.
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申请公布号 |
US4779281(A) |
申请公布日期 |
1988.10.18 |
申请号 |
US19870076754 |
申请日期 |
1987.07.23 |
申请人 |
HITACHI, LTD. |
发明人 |
NAKA, HIROSHI;SEKO, ICHIRO;KOBAYASHI, SHUJI;HANEDA, MAKOTO |
分类号 |
H04B10/00;G02B6/42;H01L33/00;H01S5/00;H01S5/02;H01S5/227;H04B10/02;H04B10/28;(IPC1-7):H01L33/00;H01S3/19 |
主分类号 |
H04B10/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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