| 摘要 |
PURPOSE:To permit deactivation of enzyme in an enzyme immobilized material in which enzyme is immobilized by immersing the enzyme immobilized material into an acidic soln. CONSTITUTION:A photoresist film 1 is spin-coated on the surface of a wafer formed with an ISFET 2 on a sapphire substrate 3. The film 1 on the gate region on the FET 2 is then removed by using a mask and by exposing and developing. A hydrophilic primer is then spin-coated on a wafer and an amino group is introduced into the surface of the gate region of the FET 2 provided with the enzyme immobilized film 4. This wafer is immersed into an aq. glutaraldehyde soln. and an aq. protein soln. contg. enzyme and crosslinking agent is spin-coated thereon to complete the crosslinking reaction by the glutaraldehyde, by which a film 4 is formed. This wafer is immersed in acetone and is subjected to an ultrasonic treatment, then the film 1 is eluted in the acetone and the film 4 formed on the film 1 is exfoliated as well together with said elution. As a result, only the film 4 formed on the gate region of the FET 2 remains. This wafer is immersed into hydrochloric acid, by which the deactivated film 4 is formed on the gate region of the FET. |
