| 摘要 |
PURPOSE:To stabilize abnormal temperature detecting operations, by detecting the abnormal temperature at the surface and periphery of a memory device by means of an electric circuit having a hysteresis characteristic. CONSTITUTION:High temperature side abnormality detection is made by means of a serial circuit of a thermistor TH1 and resistance R5 and low temperature side abnormality detection is made by means of serial circuit of a resistance R6 and a thermistor TH2. A reference voltage V1 corresponding to an abnormal temperature is formed against detecting temperature signals V2 and V3 and outputs of voltage comparison circuits OP1 and OP2 are inputted to an AND gate G1. From the output of the AND gate G1, an abnormal temperature detecting output is sent out. In this case, the voltage V1 drops following the output inverting operations of the circuits OP1 and OP2 and, as a result, a hysteresis characteristic is obtained and detecting operation is stabilized.
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