发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To obtain the titled device for mass production capable of clean, homogeneous, and high-speed treatment, by providing bulkheads around a target electrode and a substrate holder, respectively, and inserting a partition plate between the above so as to form individual closed spaces between the plate and the electrode and also between the plate and a substrate. CONSTITUTION:A substrate 5 to be coated is attached and fixed to a substrate holder 6, and the inside of a vacuum vessel 1 is evacuated 25. Next, a partition plate 7 is inserted between the holder 6 and a target 2 and pushed up together with the holder 6 by means of a driving device 22, so that closed-region spaces are formed between the plate 7 and a bulkhead 9 and also between the plate 7 and a bulkhead 10. Subsequently, in a presputtering space, a high-frequency voltage 20 is impressed between a target electrode 3 and the plate 7, and the positive ions of formed plasma are bombarded against the target 2 surface and the impurities in the surface are sputtered out. The holder 6 is slightly lowered and the plate 7 is pulled and held into a storage space 35. Then, the holder 6 is raised to the prescribed position and a voltage is impressed on the electrode 3 so as to form the electrode 3 into a cathode, and the target 2 surface is sputtered by formed plasma, and, by allowing scattered grains to adhere to the substrate 5 surface, a thin film is formed.
申请公布号 JPS63247361(A) 申请公布日期 1988.10.14
申请号 JP19870080969 申请日期 1987.04.03
申请人 HITACHI LTD 发明人 SETOYAMA HIDETSUGU;OIKAWA SHINZO;ARIMATSU KEIJI
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址