| 摘要 |
PURPOSE:To obtain a P-I-N type amorphous solar cell, conversion efficiency of which hardly deteriorates by light irradiation, by adding a P-type impurity in a large quantity on a P-I interface and in a small quantity in the direction of an N-I interface into an I layer while adding an N-type impurity in a large quantity on the N-l interface and in a small quantity in the direction of the P-I interface and forming the I layer. CONSTITUTION:A glass substrate 2 with a transparent conductive film 1 is set to one chamber in a multi-chamber type plasma CVD device, and the mixed gas of SiH4, CH4, H2 and B2H6 is introduced and plasma-discharged to shape a P-type amorphous silicon layer 3. The substrate 2 is transferred into another chamber, and an I-type amorphous silicon layer 4 is formed. The mixing ratio of B2H6 gas to SiH4 and H2 gas is reduced gradually to 0.1% or smaller at that time while the mixing ratio of PH3 gas is increased by degrees from 0% to 0.1% or less, thus shaping the film of an I-type amorphous silicon layer 4. The impurities of boron and phosphorus are added to the silicon layer 4 in desired concentration distribution respectively. The substrate 2 is transported into another chamber, an N-type amorphous silicon layer 5 is formed, and the substrate 2 is taken out of a device. Ag is evaporated, and a rear electrode 6 is formed. |
